activity
20122022
most citedAnisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions

10 citations · 11 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2022

Reproducibility and control of superconducting flux qubits

T. Chang, I. Holzman, T. Cohen +3

Superconducting flux qubits are promising candidates for the physical realization of a scalable quantum processor. Indeed, these circuits may have both a small decoherence rate and…

cond-mat.mes-hall2021

Valley population of donor states in highly strained silicon

B. Voisin, K. S. H. Ng, J. Salfi +13

Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valle…

cond-mat.mes-hall2020★ 10 cited

Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions

L. H. Willems van Beveren, D. L. Creedon, N. Eikenberg +6

We present a study of the structural and electronic properties of ultra-nanocrystalline diamond films that were modified by adding nitrogen to the gas mixture during chemical vapou…

cond-mat.mtrl-sci2020

Epitaxial growth of SiC on (100) Diamond

A. Tsai, A. Aghajamali, N. Dontschuk +11

We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch ex…

cond-mat.mtrl-sci2012★ 1 cited

Efficiently Engineered Room Temperature Single Photons in Silicon Carbide

S. Castelletto, B. C. Johnson, N. Stavrias +2

We report the first observation of stable single photon sources in silicon carbide (SiC). These sources are extremely bright and operate at room temperature demonstrating that SiC…