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cond-mat.mtrl-sci2020
Epitaxial growth of SiC on (100) Diamond
A. Tsai, A. Aghajamali, N. Dontschuk +11
We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch ex…
cond-mat.mtrl-sci2012★ 1 cited
Efficiently Engineered Room Temperature Single Photons in Silicon Carbide
S. Castelletto, B. C. Johnson, N. Stavrias +2
We report the first observation of stable single photon sources in silicon carbide (SiC). These sources are extremely bright and operate at room temperature demonstrating that SiC…