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cond-mat.mes-hall2021
Valley population of donor states in highly strained silicon
B. Voisin, K. S. H. Ng, J. Salfi +13
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valle…
cond-mat.mes-hall2020
Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions
L. H. Willems van Beveren, D. L. Creedon, N. Eikenberg +6
We present a study of the structural and electronic properties of ultra-nanocrystalline diamond films that were modified by adding nitrogen to the gas mixture during chemical vapou…