155 citations · 463 across the 24 of their papers we have counts for
24 papers
High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip-enhanced Photoluminescence
Anis Chiout, Agnès Tempez, Thomas Carlier +9
Straintronics involves the manipulation and regulation of the electronic characteristics of 2D materials through the use of macro- and nano-scale strain engineering. In this study,…
Deep-level structure of the spin-active recombination center in dilute nitrides
A. C. Ulibarri, C. T. K. Lew, S. Q. Lim +5
A Gallium interstitial defect (Ga) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAsN dilute nitride semiconduc…
A systematic study of spin-dependent recombination in GaAsN as a function of nitrogen content
A. C. Ulibarri, R. Kothari, A. Garcia +5
A systematic study of spin-dependent recombination (SDR) under steady-state optical pumping conditions in dilute nitride semiconductors as a function of nitrogen content is reporte…
Nanoscale mapping of sub-gap electroluminescence from step-bunched, oxidized 4H-SiC surfaces
Natalia Alyabyeva, Jacques Ding, Mylène Sauty +7
Scanning tunneling luminescence microscopy (STLM) along with scanning tunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC surface prepared on the silicon fac…
Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy
Mylène Sauty, Natalia Alyabyeva, Cheyenne Lynsky +7
Scanning tunneling electroluminescence microscopy is performed on a 3-nm-thick InGaN/GaN quantum well with x = 0.23 such that the main light emission occurs in the green. The techn…
Anomalous ambipolar transport in depleted GaAs nanowires
H. Hijazi, D. Paget, A C. H. Rowe +7
We have used a polarized microluminescence technique to investigate photocarrier charge and spin transport in n-type depleted GaAs nanowires ( cm doping le…