155 citations · 463 across the 24 of their papers we have counts for
7 papers · 1 filter
Deep-level structure of the spin-active recombination center in dilute nitrides
A. C. Ulibarri, C. T. K. Lew, S. Q. Lim +5
A Gallium interstitial defect (Ga) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAsN dilute nitride semiconduc…
A systematic study of spin-dependent recombination in GaAsN as a function of nitrogen content
A. C. Ulibarri, R. Kothari, A. Garcia +5
A systematic study of spin-dependent recombination (SDR) under steady-state optical pumping conditions in dilute nitride semiconductors as a function of nitrogen content is reporte…
Nanoscale mapping of sub-gap electroluminescence from step-bunched, oxidized 4H-SiC surfaces
Natalia Alyabyeva, Jacques Ding, Mylène Sauty +7
Scanning tunneling luminescence microscopy (STLM) along with scanning tunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC surface prepared on the silicon fac…
Imaging Seebeck drift of excitons and trions in MoSe2 monolayers
Sangjun Park, Bo Han, Caroline Boule +10
Hyperspectral imaging at cryogenic temperatures is used to investigate exciton and trion propagation in MoSe monolayers encapsulated with hexagonal boron nitride (hBN). Under a…
Absence of an intrinsic value for the surface recombination velocity in doped semiconductors
F. Cadiz, D. Paget, V. L. Berkovits +4
A self-consistent expression for the surface recombination velocity and the surface Fermi level unpinning energy as a function of light excitation power () is presented for…
Piezoresistance in silicon at uniaxial compressive stresses up to 3 GPa
J. S. Milne, I. Favorskiy, A. C. H. Rowe +2
The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 G…