155 citations · 463 across the 24 of their papers we have counts for
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cond-mat.mes-hall2013
VLS-HVPE growth of ultra-long and defect-free GaAs nanowires investigated by ab initio simulation coupled to near-field microscopy
Yamina Andre, Kaddour Lekhal, Philip Hoggan +13
High aspect ratio, rod-like and single crystal phase GaAs nanowires (NWs) were grown by gold catalyst-assisted hydride vapor phase epitaxy (HVPE). High resolution transmission elec…
cond-mat.mes-hall2013★ 1 cited
Effect of the Pauli principle on photoelectron spin transport in GaAs
F. Cadiz, D. Paget, A. C. H. Rowe +3
In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a funct…
cond-mat.mtrl-sci2013★ 22 cited
Absence of an intrinsic value for the surface recombination velocity in doped semiconductors
F. Cadiz, D. Paget, V. L. Berkovits +4
A self-consistent expression for the surface recombination velocity and the surface Fermi level unpinning energy as a function of light excitation power () is presented for…