739 citations · 892 across the 15 of their papers we have counts for
16 papers
Graphene assisted III-V epitaxy towards substrate recycling
Naomie Messudom, Antonella Cavanna, Ali Madouri +6
Re-using the substrate is identified as a method for reducing the cost of high efficiency III-V solar cells. The approach investigated here consists in inserting a graphene layer o…
Full ab initio atomistic approach for morphology prediction of hetero-integrated crystals: A confrontation with experiments
Sreejith Pallikkara Chandrasekharan, Sofia Apergi, Chen Wei +6
Here, we propose a comprehensive first-principle atomistic approach to predict the Wulff-Kaischew equilibrium shape of crystals heterogeneously integrated on a dissimilar material.…
Deep-level structure of the spin-active recombination center in dilute nitrides
A. C. Ulibarri, C. T. K. Lew, S. Q. Lim +5
A Gallium interstitial defect (Ga) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAsN dilute nitride semiconduc…
A systematic study of spin-dependent recombination in GaAsN as a function of nitrogen content
A. C. Ulibarri, R. Kothari, A. Garcia +5
A systematic study of spin-dependent recombination (SDR) under steady-state optical pumping conditions in dilute nitride semiconductors as a function of nitrogen content is reporte…
Regulated dynamics with two-monolayer steps in vapor-solid-solid growth of nanowires
Edith Bellet-Amalric, Federico Panciera, Gilles Patriarche +5
The growth of ZnTe nanowires and ZnTe-CdTe nanowire heterostructures is studied by \emph{in situ} transmission electron microscopy. We describe the shape, and the change of shape,…
Crystal polarity discrimination for GaN nanowires on graphene
Alexander Pavlov, Alexey Mozharov, Yury Berdnikov +5
We present experimental data and computational analysis of the formation of GaN nanowires on graphene virtual substrates. We show that GaN nanowires on graphene exhibit nitrogen po…