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J. Harmand

16 papers hereh-index 498.4k citations398 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author13
  • last author1

Across the 14 of 16 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci10
  • cond-mat.mes-hall2
  • cond-mat.other2
  • cond-mat.supr-con1
  • quant-ph1
same name
  • J. Harmand — 9 papers, h 35

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20072025
most citedWhy does wurtzite form in nanowires of III-V zinc-blende semiconductors?

739 citations · 892 across the 15 of their papers we have counts for

collaborators
Showing 2019Show all

2 papers · 1 filter

cond-mat.mtrl-sci2019★ 8 cited

Quantitative Assessment of Carrier Density by Cathodoluminescence. II. GaAs nanowires

Hung-Ling Chen, Romaric De Lépinau, Andrea Scaccabarozzi +4

Precise control of doping in single nanowires (NWs) is essential for the development of NW-based devices. Here, we investigate a series of MBE-grown GaAs NWs with Be (p-type) and S…

cond-mat.mtrl-sci2019★ 14 cited

Quantitative Assessment of Carrier Density by Cathodoluminescence. I. GaAs thin films and modeling

Hung-Ling Chen, Andrea Scaccabarozzi, Romaric De Lépinau +5

Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectronic and optoelectronic devices. Their miniaturization requires contactless charac…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.