1 citations · 1 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2023
Deep-level structure of the spin-active recombination center in dilute nitrides
A. C. Ulibarri, C. T. K. Lew, S. Q. Lim +5
A Gallium interstitial defect (Ga) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAsN dilute nitride semiconduc…
cond-mat.mtrl-sci2022★ 1 cited
A systematic study of spin-dependent recombination in GaAsN as a function of nitrogen content
A. C. Ulibarri, R. Kothari, A. Garcia +5
A systematic study of spin-dependent recombination (SDR) under steady-state optical pumping conditions in dilute nitride semiconductors as a function of nitrogen content is reporte…