Spin-dependent electron dynamics and recombination in GaAs(1-x)N(x) alloys at room temperature

Abstract

We report on both experimental and theoretical study of conduction-electron spin polarization dynamics achieved by pulsed optical pumping at room temperature in GaAs(1-x)N(x) alloys with a small nitrogen content (x = 2.1, 2.7, 3.4%). It is found that the photoluminescence circular polarization determined by the mean spin of free electrons reaches 40-45% and this giant value persists within 2 ns. Simultaneously, the total free-electron spin decays rapidly with the characteristic time ~150 ps. The results are explained by spin-dependent capture of free conduction electrons on deep paramagnetic centers resulting in dynamical polarization of bound electrons. We have developed a nonlinear theory of spin dynamics in the coupled system of spin-polarized free and localized carriers which describes the experimental dependencies, in particular, electron spin quantum beats observed in a transverse magnetic field.

5 pages, 4 figures, Submitted to JETP Letters

References in corpus (2)

• Spin relaxation of conduction electrons in bulk III-V semiconductors
• Spin-dependent recombination in GaAsN alloys

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• Electron-nucleus spin correlation conservation of the spin dependent recombination in Ga${}^{2+}$ centers
• Machine learning assisted GaAsN circular polarimeter
• A systematic study of spin-dependent recombination in GaAs${}_{1-x}$N${}_x$ as a function of nitrogen content
• Deep-level structure of the spin-active recombination center in dilute nitrides