306 citations · 317 across the 3 of their papers we have counts for
3 papers
Electrical anisotropy of heteroepitaxial InSb/GaAs layers
T. A. Komissarova, A. N. Semenov, D. A. Kirilenko +5
We report on study of electrical and structural properties of InSb/GaAs(001) heteroepitaxial layers in [110] and [1-10] crystallographic directions. Strong anisotropy of electron t…
Photoluminescence studies of Zeeman effect in type-II InSb/InAs nanostructures
Ya. V. Terentyev, M. S. Mukhin, A. A. Toropov +5
Electron spin polarization up to 100% has been observed in type-II narrow-gap heterostructures with ultrathin InSb insertions in an InAs matrix via investigation of circularly pola…
Low-temperature spin relaxation in n-type GaAs
R. I. Dzhioev, K. V. Kavokin, V. L. Korenev +6
Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity…