Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices

Abstract

We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are studied by scanning magneto-optical Kerr rotation microscopy. Related methods are used to demonstrate electrical spin detection of optically-injected spin polarized currents. Dynamical properties of spin transport are inferred from studies based on the Hanle effect, and the influence of strain on spin transport data in these devices is discussed.

arXiv comment5 pages, 6 figs. ICPS-28 proceedings (July'06, Vienna) for J. Appl. Phys

References in corpus (8)

• Direct electronic measurement of the spin Hall effect
• Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier
• Low-temperature spin relaxation in n-type GaAs
• Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
• Imaging spin flows in semiconductors subject to electric, magnetic, and strain fields
• Spin accumulation in forward-biased MnAs/GaAs Schottky diodes
• Effects of strain, electric, and magnetic fields on lateral electron spin transport in semiconductor epilayers
• Bias-dependent electron spin lifetimes in n-GaAs and the role of donor impact ionization

Cited by in corpus (7)

• Semiconductor Spintronics
• Spin dynamics in semiconductors
• Long-lived spin plasmons in a spin-polarized two-dimensional electron gas
• Electric field-driven coherent spin reorientation of optically generated electron spin packets in InGaAs
• Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems
• Layer-dependent optically-induced spin polarization in InSe
• Triggering phase-coherent spin packets by pulsed electrical spin injection across an Fe/GaAs Schottky barrier