activity
20002019
most citedMetallic, Magnetic and Molecular Nanocontacts

60 citations · 211 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2019★ 31 cited

Proximity-induced ferromagnetism and chemical reactivity in few layers VSe2 heterostructures

G. Vinai, C. Bigi, A. Rajan +11

Among Transition-Metal Dichalcogenides, mono and few-layers thick VSe2 has gained much recent attention following claims of intrinsic room-temperature ferromagnetism in this system…

cond-mat.mes-hall2016★ 60 cited

Metallic, Magnetic and Molecular Nanocontacts

Ryan Requist, Pier Paolo Baruselli, Alexander Smogunov +3

Scanning tunnelling microscopy and break-junction experiments realize metallic and molecular nanocontacts that act as ideal one-dimensional channels between macroscopic electrodes.…

cond-mat.mes-hall2013★ 44 cited

Kondo conductance across the smallest spin 1/2 radical molecule

Ryan Requist, Silvio Modesti, Pier Paolo Baruselli +3

Molecular contacts are generally poorly conducting because their energy levels tend to lie far from the Fermi energy of the metal contact, necessitating undesirably large gate and…

cond-mat.mtrl-sci2009★ 13 cited

Correction of systematic errors in scanning tunnelling spectra on semiconductor surfaces: the energy gap of Si(111)-7x7 at 0.3 K

S. Modesti, H. Gutzmann, J. Wiebe +1

The investigation of the electronic properties of semiconductor surfaces using scanning tunnelling spectroscopy (STS) is often hindered by non-equilibrium transport of the injected…

cond-mat.mtrl-sci2007★ 33 cited

Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surface

A. Stroppa, X. Duan, M. Peressi +2

We present a combined experimental and computational study of the (110) cross-sectional surface of Mn -doped GaAs samples. We focus our study on three different selected Mn defe…

cond-mat.mtrl-sci2005★ 4 cited

Cross-sectional imaging of sharp Si interlayers embedded in gallium arsenide

Xiangmei Duan, Stefano Baroni, Silvio Modesti +1

We investigate the electronic properties of the (110) cross-sectional surface of Si-doped GaAs using first-principles techniques. We focus on doping configurations with an equal co…