642 citations · 854 across the 7 of their papers we have counts for
7 papers
Thermal dynamics of charge density wave pinning in ZrTe3
Limin Liu, Changjiang Zhu, Z. Y. Liu +15
Impurity pinning has long been discussed to have a profound effect on the dynamics of an incommensurate charge density wave (CDW), which would otherwise slide through the lattice w…
Robust Gapless Surface State against Surface Magnetic Impurities on (BiSb)Te Evidenced by In Situ Magnetotransport Measurements
Liuqi Yu, Longqian Hu, Jorge L. Barreda +5
Despite extensive experimental and theoretical efforts, the important issue of the effects of surface magnetic impurities on the topological surface state of a topological insulato…
Disorder Enhanced Nuclear Spin Relaxation at Landau Level Filling Factor One
Tong Guan, Benedikt Friess, Yongqing Li +4
The nuclear spin relaxation rate (1/) is measured for GaAs two-dimensional electron systems in the quantum Hall regime with an all-electrical technique for agitating and probi…
Evidence for Half-Metallicity in n-type HgCr2Se4
Tong Guan, Chaojing Lin, Chongli Yang +8
High quality HgCrSe single crystals have been investigated by magnetization, electron transport and Andreev reflection spectroscopy. In the ferromagnetic ground state, the…
Parallel field magnetoresistance in topological insulator thin films
C. J. Lin, X. Y. He, J. Liao +11
We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel…
Local photocurrent generation in thin films of the topological insulator Bi2Se3
C. Kastl, T. Guan, X. Y. He +3
We report on the optoelectronic properties of thin films of Bi2Se3 grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns…
Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
J. Chen, H. J. Qin, F. Yang +10
We report that BiSe thin films can be epitaxially grown on SrTiO substrates, which allow for very large tunablity in carrier density with a back-gate. The observed lo…