Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys

Abstract

We present the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors. By exploiting the large polarization charges in the III-V nitrides, we are able to create wide slabs of high density mobile electrons without introducing shallow donors. Transport measurements reveal the superior properties of the polarization doped electron distributions than comparable shallow donor doped structures. The technique is readily employed for creating highly conductive layers in many device structures.

Submitted to Applied Physics Letters

Cited by in corpus (12)

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• Compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors
• Electrical and Optical Properties of Heavily Ge-Doped AlGaN
• On the quantum and classical scattering times due to charged dislocations in an impure electron gas
• Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN
• N-polar GaN/AlN resonant tunneling diodes
• Electron Mobility in Polarization-doped Al${}_{0-0.2}$GaN with a Low Concentration Near 10${}^{17}$ cm${}^{-3}$
• Controlling a three dimensional electron slab of graded Al${}_x$Ga${}_{1-x}$N
• Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy
• Polarization doping ab initio verification of the concept charge conservation and nonlocality