205 citations · 304 across the 6 of their papers we have counts for
6 papers
High-Q, size-independent, and reconfigurable optical antennas via zero-index material dispersion engineering
Prasad P. Iyer, Mihir Pendharkar, Anchal Agrawal +8
Enhancing light-matter interactions at the nanoscale is foundational to nanophotonics, with epsilon near zero (ENZ) materials demonstrating significant potential.High-quality (Q) f…
Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors
Athith Krishna, Aditya Raj, Nirupam Hatui +2
In this study the MOCVD growth and electrical properties of N-polar modulation doped p-AlGaN/GaN superlattices (SLs) were investigated. Hole sheet charge density and mobility were…
AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment
Athith Krishna, Aditya Raj, Nirupam Hatui +4
To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable. Authors report the fi…
Lateral Confinement of Electrons in Vicinal N-polar AlGaN/GaN Heterostructure
Digbijoy N. Nath, Stacia Keller, Eric Hsieh +3
We studied orientation dependent transport in vicinal N-polar AlGaN/GaN heterostructures. We observed significant anisotropy in the current carrying charge parallel and perpendicul…
Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells
Umit Ozgur, Henry O. Everitt, Stacia Keller +1
Stimulated emission (SE) was measured from two InGaN multiple quantum well (MQW) laser structures with different In compositions. SE threshold power densities (I_th) increased with…
Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys
Debdeep Jena, Sten Heikman, Daniel Green +7
We present the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors. By exploiting the large polarization charges in th…