205 citations · 329 across the 7 of their papers we have counts for
7 papers
Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics
Guillaume Lheureux, Morteza Monavarian, Ryan Anderson +7
We investigate Tamm plasmon (TP) modes in a metal/semiconductor distributed Bragg reflector (DBR) interface. A thin Ag (silver) layer with an optimized thickness (~ 55 nm from simu…
Unidirectional Luminescence from Quantum Well Metasurfaces
Prasad P. Iyer, Ryan A. DeCrescent, Nikita A. Butakov +6
III-Nitride light emitting diodes (LEDs) are the backbone of ubiquitous lighting and display applications. Imparting directional emission is an essential requirement for many LED i…
Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC
Burhan K. SaifAddin, Abdullah Almogbel, Christian J. Zollner +7
The light output of deep ultraviolet (UV-C) AlGaN light-emitting diodes (LEDs) is limited due to their poor light extraction efficiency (LEE). To improve the LEE of AlGaN LEDs, we…
Explanation of low efficiency droop in semipolar InGaN/GaN LEDs through evaluation of carrier recombination coefficients
Morteza Monavarian, Arman Rashidi, Andrew A. Aragon +4
We report the carrier dynamics and recombination coefficients in single-quantum-well semipolar InGaN/GaN light-emitting diodes emitting at 440 nm with 93% peak i…
Lateral Confinement of Electrons in Vicinal N-polar AlGaN/GaN Heterostructure
Digbijoy N. Nath, Stacia Keller, Eric Hsieh +3
We studied orientation dependent transport in vicinal N-polar AlGaN/GaN heterostructures. We observed significant anisotropy in the current carrying charge parallel and perpendicul…
Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells
Umit Ozgur, Henry O. Everitt, Stacia Keller +1
Stimulated emission (SE) was measured from two InGaN multiple quantum well (MQW) laser structures with different In compositions. SE threshold power densities (I_th) increased with…