672 citations · 2k across the 19 of their papers we have counts for
19 papers
In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
G. Koblmüller, S. Fernández-Garrido, E. Calleja +1
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffracti…
In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
S. Fernández-Garrido, G. Koblmüller, E. Calleja +1
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf-plasma assisted molecular beam epitaxy. The GaN deco…
Strain and composition dependencies of the near bandgap optical transitions in monoclinic (AlGa)O alloys with coherent biaxial in-plane strain on (010) GaO
Rafał Korlacki, Matthew Hilfiker, Jenna Knudtson +7
The bowing of the energy of the three lowest band-to-band transitions in -(AlGa)O alloys was resolved using a combined density functional theory (DFT) and…
Evidence of localization effect on photoelectron transport induced by alloy disorder in nitride semiconductor compounds
Mylène Sauty, Nicolas M. S. Lopes, Jean-Philippe Banon +7
Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield o…
Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shape defects and Random Alloy Fluctuation in Quantum Wells
Cheng-Han Ho, James S. Speck, Claude Weisbuch +1
For nitride-based blue and green light-emitting diodes (LEDs), the forward voltage is larger than expected, especially for green LEDs. This is mainly due to the larg…
Three-dimensional modeling of minority-carrier lateral diffusion length including random alloy fluctuations in (In,Ga)N and (Al,Ga)N single quantum wells
Huan-Ting Shen, Claude Weisbuch, James S. Speck +1
For nitride-based InGaN and AlGaN quantum well (QW) LEDs, the potential fluctuations caused by natural alloy disorders limit the lateral intra-QW carrier diffusion length and curre…