6 citations · 8 across the 6 of their papers we have counts for
7 papers
Localization Contrast As a Fundamental Limit of Radiative Quantum Efficiency
Arsineh Apelian, Tanay Tak, Xuance Jiang +3
Disorder can localize valence- and conduction-band states to different degrees, yet whether such localization contrast has observable consequences remains poorly understood. Here,…
Understanding Ideality Factor in Wide-Band Gap Semiconductor Devices with Strong Recombination Planes
Iris Celupica-Liu, Tanay Tak, Yuh-Renn Wu +1
Ideality factor of a diode will depend on the location of the plane of maximum recombination within the diode's depletion region. It will have a minimum of one, but can range up to…
Efficient Analysis of Carrier Transport and TM-TE Emission in AlGaN UVC LEDs via Multi-band Localization Landscape Theory
Yu-Ming Chang, Ping-Jie Zhuang, Marcel Filoche +3
AlGaN-based UVC LEDs (220-250 nm) suffer from poor hole confinement and strain-induced |Z>-band dominance at high Al content (>60%), leading to increased TM emission and reduced ex…
Nanoscale imaging of reduced forward bias at V-defects in green-emitting nitride LEDs
C. Fornos, N. Alyabyeva, W. Y. Ho +6
Record wall-plug efficiencies in long-wavelength, III-nitride light-emitting diodes (LEDs) have recently been achieved through improvements in electrical efficiency in devices cont…
Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces
Mylène Sauty, Jean-Philippe Banon, Nicolas M. S. Lopes +4
The electron density of states in the open quantum well formed by the downward band bending region at the surface of cesiated p-type GaN is investigated. We theoretically predict t…
The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs
Huai-Chin Huang, Shih-Min Chen, Claude Weisbuch +2
Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies (IQEs) than violet, blue, and green InGaN LEDs due to a reduction in radiative recombinatio…
Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy
Mylène Sauty, Natalia Alyabyeva, Cheyenne Lynsky +7
Scanning tunneling electroluminescence microscopy is performed on a 3-nm-thick InGaN/GaN quantum well with x = 0.23 such that the main light emission occurs in the green. The techn…