6 citations · 8 across the 6 of their papers we have counts for
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Nanoscale imaging of reduced forward bias at V-defects in green-emitting nitride LEDs
C. Fornos, N. Alyabyeva, W. Y. Ho +6
Record wall-plug efficiencies in long-wavelength, III-nitride light-emitting diodes (LEDs) have recently been achieved through improvements in electrical efficiency in devices cont…
Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces
Mylène Sauty, Jean-Philippe Banon, Nicolas M. S. Lopes +4
The electron density of states in the open quantum well formed by the downward band bending region at the surface of cesiated p-type GaN is investigated. We theoretically predict t…
The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs
Huai-Chin Huang, Shih-Min Chen, Claude Weisbuch +2
Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies (IQEs) than violet, blue, and green InGaN LEDs due to a reduction in radiative recombinatio…