6 citations · 8 across the 6 of their papers we have counts for
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Understanding Ideality Factor in Wide-Band Gap Semiconductor Devices with Strong Recombination Planes
Iris Celupica-Liu, Tanay Tak, Yuh-Renn Wu +1
Ideality factor of a diode will depend on the location of the plane of maximum recombination within the diode's depletion region. It will have a minimum of one, but can range up to…
Efficient Analysis of Carrier Transport and TM-TE Emission in AlGaN UVC LEDs via Multi-band Localization Landscape Theory
Yu-Ming Chang, Ping-Jie Zhuang, Marcel Filoche +3
AlGaN-based UVC LEDs (220-250 nm) suffer from poor hole confinement and strain-induced |Z>-band dominance at high Al content (>60%), leading to increased TM emission and reduced ex…
Nanoscale imaging of reduced forward bias at V-defects in green-emitting nitride LEDs
C. Fornos, N. Alyabyeva, W. Y. Ho +6
Record wall-plug efficiencies in long-wavelength, III-nitride light-emitting diodes (LEDs) have recently been achieved through improvements in electrical efficiency in devices cont…
The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs
Huai-Chin Huang, Shih-Min Chen, Claude Weisbuch +2
Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies (IQEs) than violet, blue, and green InGaN LEDs due to a reduction in radiative recombinatio…