Magnetotransport properties of a polarization-doped three-dimensional electron slab

Abstract

We present evidence of strong Shubnikov-de-Haas magnetoresistance oscillations in a polarization-doped degenerate three-dimensional electron slab in an Al${}_x$Ga${}_{1-x}$N semiconductor system. The degenerate free carriers are generated by a novel technique by grading a polar alloy semiconductor with spatially changing polarization. Analysis of the magnetotransport data enables us to extract an effective mass of $m^{\star }=0.19m_0$ and a quantum scattering time of ${\tau }_q=0.3ps$. Analysis of scattering processes helps us extract an alloy scattering parameter for the Al${}_x$Ga${}_{1-x}$N material system to be $V_0=1.8eV$.

References in corpus (3)

• Spontaneous polarization and piezoelectric constants of III-V nitrides
• Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys
• On the quantum and classical scattering times due to charged dislocations in an impure electron gas

Cited by in corpus (7)

• Hole mobility of strained GaN from first principles
• Modeling of High Composition AlGaN Channel HEMTs with Large Threshold Voltage
• Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures
• Transport study of Berry's phase, the resistivity rule, and quantum Hall effect in graphite
• Controlling a three dimensional electron slab of graded Al${}_x$Ga${}_{1-x}$N
• Negative Giant Longitudinal Magnetoresistance in NiMnSb/InSb: An interface effect
• Polarization doping ab initio verification of the concept charge conservation and nonlocality