247 citations · 670 across the 10 of their papers we have counts for
10 papers
Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors
Athith Krishna, Aditya Raj, Nirupam Hatui +2
In this study the MOCVD growth and electrical properties of N-polar modulation doped p-AlGaN/GaN superlattices (SLs) were investigated. Hole sheet charge density and mobility were…
AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment
Athith Krishna, Aditya Raj, Nirupam Hatui +4
To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable. Authors report the fi…
Lateral Confinement of Electrons in Vicinal N-polar AlGaN/GaN Heterostructure
Digbijoy N. Nath, Stacia Keller, Eric Hsieh +3
We studied orientation dependent transport in vicinal N-polar AlGaN/GaN heterostructures. We observed significant anisotropy in the current carrying charge parallel and perpendicul…
Magnetotransport properties of a polarization-doped three-dimensional electron slab
D. Jena, S. Heikman, J. S. Speck +4
We present evidence of strong Shubnikov-de-Haas magnetoresistance oscillations in a polarization-doped degenerate three-dimensional electron slab in an AlGaN semicond…
On the quantum and classical scattering times due to charged dislocations in an impure electron gas
D. Jena, U. K. Mishra
We derive the ratio of transport and single particle relaxation times in three and two - dimensional electron gases due to scattering from charged dislocations in semiconductors. T…
Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys
Debdeep Jena, Sten Heikman, Daniel Green +7
We present the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors. By exploiting the large polarization charges in th…