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physics.app-ph2019★ 30 cited
Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors
Athith Krishna, Aditya Raj, Nirupam Hatui +2
In this study the MOCVD growth and electrical properties of N-polar modulation doped p-AlGaN/GaN superlattices (SLs) were investigated. Hole sheet charge density and mobility were…
physics.app-ph2019★ 34 cited
AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment
Athith Krishna, Aditya Raj, Nirupam Hatui +4
To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable. Authors report the fi…