672 citations · 2k across the 19 of their papers we have counts for
7 papers · 1 filter
In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
S. Fernández-Garrido, G. Koblmüller, E. Calleja +1
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf-plasma assisted molecular beam epitaxy. The GaN deco…
Strain and composition dependencies of the near bandgap optical transitions in monoclinic (AlGa)O alloys with coherent biaxial in-plane strain on (010) GaO
Rafał Korlacki, Matthew Hilfiker, Jenna Knudtson +7
The bowing of the energy of the three lowest band-to-band transitions in -(AlGa)O alloys was resolved using a combined density functional theory (DFT) and…
Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
Chi-Kang Li, Marco Piccardo, Li-Shuo Lu +7
This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape…
Localization landscape theory of disorder in semiconductors II: Urbach tails of disordered quantum well layers
Marco Piccardo, Chi-Kang Li, Yuh-Renn Wu +7
Urbach tails in semiconductors are often associated to effects of compositional disorder. The Urbach tail observed in InGaN alloy quantum wells of solar cells and LEDs by biased ph…
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
Justin Iveland, Lucio Martinelli, Jacques Peretti +2
We report on the unambiguous detection of Auger electrons by electron emission spectroscopy from a cesiated InGaN/GaN light emitting diode (LED) under electrical injection. Electro…
In vacancies in InN grown by plasma-assisted molecular beam epitaxy
Floris Reurings, Filip Tuomisto, Chad S. Gallinat +2
The authors have applied positron annihilation spectroscopy to study the effect of different growth conditions on vacancy formation in In- and N-polar InN grown by plasma-assisted…