672 citations · 2k across the 19 of their papers we have counts for
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Evidence of localization effect on photoelectron transport induced by alloy disorder in nitride semiconductor compounds
Mylène Sauty, Nicolas M. S. Lopes, Jean-Philippe Banon +7
Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield o…
Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy
Daniel Myers, Andrew Espenlaub, Kristina Gelzinyte +5
We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spect…
Donors and Deep Acceptors in -Ga2O3
Adam T. Neal, Shin Mou, Subrina Rafique +9
We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in -Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples gr…
Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy
W. Hahn, J. -M. Lentali, P. Polovodov +11
We present direct experimental evidences of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measu…
Current-Induced Spin Polarization in Gallium Nitride
W. F. Koehl, M. H. Wong, C. Poblenz +4
Electrically generated spin polarization is probed directly in bulk GaN using Kerr rotation spectroscopy. A series of n-type GaN epilayers are grown in the wurtzite phase both by m…