93 citations · 184 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2016★ 72 cited
Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates
Meng Qi, Guowang Li, Satyaki Ganguly +8
We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double hete…
cond-mat.mtrl-sci2015★ 19 cited
Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes
Meng Qi, Guowang Li, Vladimir Protasenko +10
This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual ma…
cond-mat.mtrl-sci2010★ 93 cited
Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design
Debdeep Jena, John Simon, Albert +12
The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abr…