386 citations · 496 across the 5 of their papers we have counts for
5 papers
Electron Mobility in Polarization-doped AlGaN with a Low Concentration Near 10 cm
Mingda Zhu, Meng Qi, Kazuki Nomoto +6
In this letter, carrier transport in graded AlGaN with a polarization-induced n-type doping as low as ~ 10 cm is repor…
Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates
Meng Qi, Guowang Li, Satyaki Ganguly +8
We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double hete…
Unique opportunity to harness polarization in GaN to override the conventional power electronics figure-of-merits
Huili Grace Xing, Bo Song, Mingda Zhu +4
Owing to the large breakdown electric field, wide bandgap semiconductors such as SiC, GaN, Ga2O3 and diamond based power devices are the focus for next generation power switching a…
Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment
Rusen Yan, Sara Fathipour, Yimo Han +8
Van der Waals (vdW) heterojunctions composed of 2-dimensional (2D) layered materials are emerging as a solid-state materials family that exhibit novel physics phenomena that can po…
Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes
Meng Qi, Guowang Li, Vladimir Protasenko +10
This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual ma…