147 citations · 318 across the 6 of their papers we have counts for
6 papers
Atomically-thin Femtojoule Filamentary Memristor
Huan Zhao, Zhipeng Dong, He Tian +12
The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of…
Spatial-Temporal Imaging of Anisotropic Photocarrier Dynamics in Black Phosphorus
Bolin Liao, Huan Zhao, Ebrahim Najafi +6
As an emerging single elemental layered material with a low symmetry in-plane crystal lattice, black phosphorus (BP) has attracted significant research interest owing to its unique…
Low-Symmetry Two-Dimensional Materials for Electronic and Photonic Applications
He Tian, Jesse Tice, Ruixiang Fei +4
In this review article, we discuss the synthesis, properties, and novel device applications of low-symmetry 2D materials, including black phosphorus and its arsenic alloys, compoun…
Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates
Meng Qi, Guowang Li, Satyaki Ganguly +8
We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double hete…
Polarization-induced Zener Tunnel Diodes in GaN/InGaN/GaN Heterojunctions
Xiaodong Yan, Wenjun Li, S. M. Islam +4
By the insertion of thin InGaN layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling cur…
Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes
Meng Qi, Guowang Li, Vladimir Protasenko +10
This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual ma…