147 citations · 318 across the 6 of their papers we have counts for
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cond-mat.mes-hall2015
Polarization-induced Zener Tunnel Diodes in GaN/InGaN/GaN Heterojunctions
Xiaodong Yan, Wenjun Li, S. M. Islam +4
By the insertion of thin InGaN layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling cur…
cond-mat.mtrl-sci2015★ 19 cited
Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes
Meng Qi, Guowang Li, Vladimir Protasenko +10
This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual ma…