19 citations · 66 across the 5 of their papers we have counts for
5 papers
Blue (In,Ga)N Light-Emitting Diodes with Buried n+-p+ Tunnel Junctions by Plasma-Assisted Molecular Beam Epitaxy
YongJin Cho, Shyam Bharadwaj, Zongyang Hu +4
Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunnel junction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on single-crystal Ga-pol…
Single-Crystal N-polar GaN p-n Diodes by Plasma-Assisted Molecular Beam Epitaxy
YongJin Cho, Zongyang Hu, Kazuki Nomoto +2
N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-qualit…
Electron Mobility in Polarization-doped AlGaN with a Low Concentration Near 10 cm
Mingda Zhu, Meng Qi, Kazuki Nomoto +6
In this letter, carrier transport in graded AlGaN with a polarization-induced n-type doping as low as ~ 10 cm is repor…
Unique opportunity to harness polarization in GaN to override the conventional power electronics figure-of-merits
Huili Grace Xing, Bo Song, Mingda Zhu +4
Owing to the large breakdown electric field, wide bandgap semiconductors such as SiC, GaN, Ga2O3 and diamond based power devices are the focus for next generation power switching a…
Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes
Meng Qi, Guowang Li, Vladimir Protasenko +10
This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual ma…