N. Tanen

activity

20162026

most citedIntrinsic Electron Mobility Limits in beta-Ga2O3

423 citations · 540 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mtrl-sci2026

Grafted Low-Leakage Si/AlN p-n Diodes Enabled by Fluorinated AlN Interface

Yi Lu, Tsung-Han Tsai, Qingxiao Wang +19

Ultrawide-bandgap AlN is a promising material for next-generation power electronics; however, its practical implementation is hindered by unstable surface chemistry and the high ac…

cond-mat.mtrl-sci2021★ 12 cited

Ultrafast Dynamics of Gallium Vacancy Charge States in $β$ -Ga $_{2}$ O $_{3}$

Arjan Singh, Okan Koksal, Nicholas Tanen +6

Point defects in crystalline materials often occur in multiple charge states. Although many experimental methods to study and explore point defects are available, techniques to exp…

cond-mat.mtrl-sci2020★ 45 cited

$γ$ -phase Inclusions as Common Defects in Alloyed $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ and Doped $β$ -Ga $_{2}$ O $_{3}$ Films

Celesta S. Chang, Nicholas Tanen, Vladimir Protasenko +5

$β$ -Ga $_{2}$ O $_{3}$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission el…

physics.app-ph2020

Intra- and Inter-Conduction Band Optical Absorption Processes in $β$ -Ga $_{2}$ O $_{3}$

Arjan Singh, Okan Koksal, Nicholas Tanen +6

$β$ -Ga $_{2}$ O $_{3}$ is an ultra-wide bandgap semiconductor and is thus expected to be optically transparent to light of sub-bandgap wavelengths well into the ultraviolet. Contrary to t…

physics.app-ph2019★ 32 cited

Significantly Reduced Thermal Conductivity in Beta-(Al0.1Ga0.9)2O3/Ga2O3 Superlattices

Zhe Cheng, Nicholas Tanen, Celesta Chang +6

Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable subst…

cond-mat.mtrl-sci2018★ 28 cited

Measurement of Ultrafast Dynamics of Photoexcited Carriers in $β$ -Ga $_{2}$ O $_{3}$ by Two-Color Optical Pump-Probe Spectroscopy

Okan Koksal, Nicholas Tanen, Debdeep Jena +2

We report results from ultrafast two-color optical pump-probe spectroscopy on bulk $β$ -Ga $_{2}$ O $_{3}$ . A two-photon absorption scheme is used to photoexcite carriers with the pump pul…

cond-mat.mtrl-sci2017

Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

Hanjong Paik, Zhen Chen, Edward Lochocki +14

Epitaxial La doped BaSnO3 films were grown in an adsorption controlled regime by molecular beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown…

cond-mat.mtrl-sci2016★ 423 cited

Intrinsic Electron Mobility Limits in beta-Ga2O3

Nan Ma, Nicholas Tanen, Amit Verma +5

By systematically comparing experimental and theoretical transport properties, we identify the polar optical phonon scattering as the dominant mechanism limiting electron mobility…

Grafted Low-Leakage Si/AlN p-n Diodes Enabled by Fluorinated AlN Interface

Ultrafast Dynamics of Gallium Vacancy Charge States in β-Ga2​O3​

γ-phase Inclusions as Common Defects in Alloyed β-(Alx​Ga1-x​)2​O3​ and Doped β-Ga2​O3​ Films

Intra- and Inter-Conduction Band Optical Absorption Processes in β-Ga2​O3​