313 citations · 696 across the 12 of their papers we have counts for
12 papers
Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors
Nidhin Kurian Kalarickal, Zixuan Feng, A F M Anhar Uddin Bhuiyan +7
The performance of ultra-wide band gap materials like -GaO is critically dependent on achieving high average electric fields within the active region o…
Probing charge transport and background doping in MOCVD grown (010) -GaO
Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia +8
A new record-high room temperature electron Hall mobility ( at ) for -Ga2O3 is demonstrated in the unin…
Metal Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field
Zhanbo Xia, Hareesh Chandrasekar, Wyatt Moore +8
Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an orde…
High electron density modulation doping using ultra-thin (1 nm) spacer layer
Nidhin Kurian Kalarickal, Zhanbo Xia, Joe Mcglone +5
We report on the design and demonstration of modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer…
Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3
Nidhin Kurian Kalarickal, Zhanbo Xia, Joe McGlone +6
We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass…
Unusual Formation of Point Defect Complexes in the Ultra-wide Band Gap Semiconductor beta-Ga2O3
Jared M. Johnson, Zhen Chen, Joel B. Varley +10
Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the pr…
Velocity Saturation in La-doped BaSnO3 Thin Films
Hareesh Chandrasekar, Junao Cheng, Tianshi Wang +11
BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properti…
Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells
P. K. Paul, T. Jarmar, L. Stolt +2
Light-induced instabilities/degradation in Cu(In,Ga)Se2 (CIGS) solar cells are a prevalent and urgent issue to resolve to improve performance, uniformity, and reliability. Here, me…
Fast C-V method to mitigate effects of deep levels in CIGS doping profiles
P. K. Paul, J. Bailey, G. Zapalac +1
In this work, methods to determine more accurate doping profiles in semiconductors is explored where trap-induced artifacts such as hysteresis and doping artifacts are observed. Sp…
Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor
Sriram Krishnamoorthy, Zhanbo Xia, Chandan Joishi +8
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulat…
Layer-Transferred MoS2/GaN PN Diodes
Edwin W. Lee, Choong Hee Lee, Pran K. Paul +6
Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Dev…
Epitaxial Growth of Large Area Single-Crystalline Few-Layer MoS2 with Room Temperature Mobility of 192 cm2V-1s-1
Lu Ma, Digbijoy N. Nath, Edwin W. Lee +4
We report on the vapor-solid growth of single crystalline few-layer MoS2 films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter lengt…