313 citations · 440 across the 6 of their papers we have counts for
5 papers · 1 filter
Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors
Nidhin Kurian Kalarickal, Zixuan Feng, A F M Anhar Uddin Bhuiyan +7
The performance of ultra-wide band gap materials like -GaO is critically dependent on achieving high average electric fields within the active region o…
Probing charge transport and background doping in MOCVD grown (010) -GaO
Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia +8
A new record-high room temperature electron Hall mobility ( at ) for -Ga2O3 is demonstrated in the unin…
High electron density modulation doping using ultra-thin (1 nm) spacer layer
Nidhin Kurian Kalarickal, Zhanbo Xia, Joe Mcglone +5
We report on the design and demonstration of modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer…
Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3
Nidhin Kurian Kalarickal, Zhanbo Xia, Joe McGlone +6
We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass…
Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells
P. K. Paul, T. Jarmar, L. Stolt +2
Light-induced instabilities/degradation in Cu(In,Ga)Se2 (CIGS) solar cells are a prevalent and urgent issue to resolve to improve performance, uniformity, and reliability. Here, me…