A. Arehart

activity

20142020

most citedModulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

313 citations · 696 across the 12 of their papers we have counts for

collaborators

Showing 2020Show all

2 papers · 1 filter

physics.app-ph2020

Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

Nidhin Kurian Kalarickal, Zixuan Feng, A F M Anhar Uddin Bhuiyan +7

The performance of ultra-wide band gap materials like $β$ -Ga $_{2}$ O $_{3}$ is critically dependent on achieving high average electric fields within the active region o…

physics.app-ph2020

Probing charge transport and background doping in MOCVD grown (010) $β$ -Ga $_{2}$ O $_{3}$

Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia +8

A new record-high room temperature electron Hall mobility ( $μ_{R T} = 194 c m^{2} / V s$ at $n \sim 8 \times 1 0^{15} c m^{- 3}$ ) for $β$ -Ga2O3 is demonstrated in the unin…

Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

Probing charge transport and background doping in MOCVD grown (010) β-Ga2​O3​

Probing charge transport and background doping in MOCVD grown (010) $β$ -Ga $_{2}$ O $_{3}$