Wyatt Moore

most citedMetal

/ B a T i O_{3} / β - G a_{2} O_{3}

Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

123 citations · 123 across the 4 of their papers we have counts for

collaborators

5 papers

physics.app-ph2020

Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

Nidhin Kurian Kalarickal, Zixuan Feng, A F M Anhar Uddin Bhuiyan +7

The performance of ultra-wide band gap materials like $β$ -Ga $_{2}$ O $_{3}$ is critically dependent on achieving high average electric fields within the active region o…

physics.app-ph2020

Probing charge transport and background doping in MOCVD grown (010) $β$ -Ga $_{2}$ O $_{3}$

Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia +8

A new record-high room temperature electron Hall mobility ( $μ_{R T} = 194 c m^{2} / V s$ at $n \sim 8 \times 1 0^{15} c m^{- 3}$ ) for $β$ -Ga2O3 is demonstrated in the unin…

cond-mat.mtrl-sci2019★ 123 cited

Metal $/ B a T i O_{3} / β - G a_{2} O_{3}$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

Zhanbo Xia, Hareesh Chandrasekar, Wyatt Moore +8

Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an orde…

physics.app-ph2019

High electron density $β - (A l_{0.18} G a_{0.82})_{2} O_{3} / G a_{2} O_{3}$ modulation doping using ultra-thin (1 nm) spacer layer

Nidhin Kurian Kalarickal, Zhanbo Xia, Joe Mcglone +5

We report on the design and demonstration of $β - (A l_{0.18} G a_{0.82})_{2} O_{3} / G a_{2} O_{3}$ modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer…

physics.app-ph2019

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3

Nidhin Kurian Kalarickal, Zhanbo Xia, Joe McGlone +6

We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass…

Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

Probing charge transport and background doping in MOCVD grown (010) β-Ga2​O3​

Metal/BaTiO3​/β−Ga2​O3​ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

High electron density β−(Al0.18​Ga0.82​)2​O3​/Ga2​O3​ modulation doping using ultra-thin (1 nm) spacer layer

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3

Probing charge transport and background doping in MOCVD grown (010) $β$ -Ga $_{2}$ O $_{3}$

Metal $/ B a T i O_{3} / β - G a_{2} O_{3}$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

High electron density $β - (A l_{0.18} G a_{0.82})_{2} O_{3} / G a_{2} O_{3}$ modulation doping using ultra-thin (1 nm) spacer layer