123 citations · 144 across the 5 of their papers we have counts for
5 papers
Planar and 3-dimensional damage free etching of -Ga2O3 using atomic gallium flux
Nidhin Kurian Kalarickal, Andreas Fiedler, Sushovan Dhara +7
In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in -Ga2O3. Etching of …
Spectral measurement of the breakdown limit of and tunnel ionization of self-trapped excitons and holes
Md M. Adnan, Darpan Verma, Zhanbo Xia +3
is an unusual semiconductor where large electric fields (~1-6 MV/cm) can be applied while still maintaining a dominant excitonic absorption peak below its ultra-wid…
Metal Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field
Zhanbo Xia, Hareesh Chandrasekar, Wyatt Moore +8
Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an orde…
High electron density modulation doping using ultra-thin (1 nm) spacer layer
Nidhin Kurian Kalarickal, Zhanbo Xia, Joe Mcglone +5
We report on the design and demonstration of modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer…
Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3
Nidhin Kurian Kalarickal, Zhanbo Xia, Joe McGlone +6
We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass…