123 citations · 144 across the 5 of their papers we have counts for
3 papers · 1 filter
Planar and 3-dimensional damage free etching of -Ga2O3 using atomic gallium flux
Nidhin Kurian Kalarickal, Andreas Fiedler, Sushovan Dhara +7
In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in -Ga2O3. Etching of …
Spectral measurement of the breakdown limit of and tunnel ionization of self-trapped excitons and holes
Md M. Adnan, Darpan Verma, Zhanbo Xia +3
is an unusual semiconductor where large electric fields (~1-6 MV/cm) can be applied while still maintaining a dominant excitonic absorption peak below its ultra-wid…
Metal Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field
Zhanbo Xia, Hareesh Chandrasekar, Wyatt Moore +8
Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an orde…