In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition

Saurav Roy; Adrian E. Chmielewski; Arkka Bhattacharyya; Praneeth Ranga; Rujun Sun; Michael A. Scarpulla; Nasim Alem; Sriram Krishnamoorthy

doi:10.1002/aelm.202100333

paper

In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition

arXiv:2103.15280 · doi:10.1002/aelm.202100333

Abstract

High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al $_{2}$ O $_{3}$ on $β$ -Ga $_{2}$ O $_{3}$ as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al $_{2}$ O $_{3}$ is performed in the same reactor as Ga $_{2}$ O $_{3}$ using trimethylaluminum and O $_{2}$ as precursors without breaking the vacuum at a growth temperature of 600 $^{0}$ C. The fast and slow near interface traps at the Al $_{2}$ O $_{3}$ / $β$ -Ga $_{2}$ O $_{3}$ interface are identified and quantified using stressed capacitance-voltage (CV) measurements on metal oxide semiconductor capacitor (MOSCAP) structures. The density of shallow and deep level initially filled traps (D $_{i t}$ ) are measured using ultra-violet (UV) assisted CV technique. The average D $_{i t}$ for the MOSCAP is determined to be 7.8 $\times$ 10 $^{11}$ cm $^{- 2}$ eV $^{- 1}$ . The conduction band offset of the Al $_{2}$ O $_{3}$ / Ga $_{2}$ O $_{3}$ interface is also determined from CV measurements and found out to be 1.7 eV which is in close agreement with the existing literature reports of ALD Al $_{2}$ O $_{3}$ / Ga $_{2}$ O $_{3}$ interface. The current-voltage characteristics are also analyzed and the average breakdown field is extracted to be approximately 5.8 MV/cm. This in-situ Al $_{2}$ O $_{3}$ dielectric on $β$ -Ga $_{2}$ O $_{3}$ with improved dielectric properties can enable Ga $_{2}$ O $_{3}$ -based high performance devices.

In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition

Abstract

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