most citedLow Temperature Homoepitaxy Of (010) -GaO By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

84 citations · 268 across the 6 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2020

Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence

Rujun Sun, Yu Kee Ooi, Praneeth Ranga +3

In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, UV', blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor…

physics.app-ph202084 cited

Low Temperature Homoepitaxy Of (010) -GaO By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy +3

In this work, we report on the growth of high-mobility -GaO homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window fo…

physics.app-ph20208 cited

Analytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction Structures

Saurav Roy, Arkka Bhattacharyya, Sriram Krishnamoorthy

This work presents the design of beta-Ga2O3 schottky barrier diode using high-k dielectric superjunction to significantly enhance the breakdown voltage vs on-resistance trade-off b…

cond-mat.mtrl-sci202061 cited

Degenerate doping in \b{eta}-Ga2O3 Single Crystals through Hf-doping

Muad Saleh, Joel B. Varley, Jani Jesenovec +4

N type conductivity of \b{eta}-Ga2O3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of \b{eta…

physics.app-ph202065 cited

Schottky Barrier Height Engineering In -GaO Using SiO Interlayer Dielectric

Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh +4

This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of -GaO by insertion of an ultra-thin SiO dielectric interlaye…

cond-mat.mtrl-sci201950 cited

Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

Praneeth Ranga, Arkka Bhattacharyya, Ashwin Rishinaramangalam +4

We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are character…