A. Bhattacharyya

activity

20192024

most citedHigh Permittivity Dielectric Field-Plated Vertical (001)

β

-Ga

_{2}

_{3}

Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of

>

1 GW/cm

^{2}

189 citations · 1k across the 27 of their papers we have counts for

collaborators

Showing 2022Show all

5 papers · 1 filter

cond-mat.mtrl-sci2022

Enhancing the Electron Mobility in Si-doped (010) $β$ -Ga $_{2}$ O $_{3}$ films with Low-Temperature Buffer Layers

Arkka Bhattacharyya, Carl Peterson, Takeki Itoh +6

We demonstrate a new substrate cleaning and buffer growth scheme in $β$ -Ga $_{2}$ O $_{3}$ epitaxial thin films using metalorganic vapor phase epitaxy (MOVPE). For the channel structure,…

cond-mat.mtrl-sci2022★ 3 cited

Ultra-Wide Bandgap Ga $_{2}$ O $_{3}$ -on-SiC MOSFETs

Yiwen Song, Arkka Bhattacharyya, Anwarul Karim +8

Ulta-wide bandgap semiconductors based on $β$ -Ga $_{2}$ O $_{3}$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's w…

cond-mat.mtrl-sci2022★ 35 cited

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1} - x$ ) $_{2}$ O $_{3}$ Films

Fikadu Alema, Carl Peterson, Arkka Bhattacharyya +3

We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1} - x$ ) $_{2}$ O $_{3}$ epitaxial films. Transfer le…

physics.app-ph2022★ 71 cited

High-Mobility Tri-Gate $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Power Figure of Merit over 0.9 GW/cm $^{2}$

Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga +2

In this letter, fin-shape tri-gate $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs are demonstrated with a high power figure of merit of 0.95 GW/cm $^{2}$ - a record high for any $β$ -Ga $_{2}$ O$…

physics.app-ph2022★ 68 cited

4.4 kV $β$ -Ga $_{2}$ O $_{3}$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^{2}$

Arkka Bhattacharyya, Shivam Sharma, Fikadu Alema +7

Field-plated (FP) depletion-mode MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN $_{x}$ dielectric…

Enhancing the Electron Mobility in Si-doped (010) β-Ga2​O3​ films with Low-Temperature Buffer Layers

Ultra-Wide Bandgap Ga2​O3​-on-SiC MOSFETs

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown β-Ga2​O3​ and β-(Alx​Ga1​−x)2​ O3​ Films

High-Mobility Tri-Gate β-Ga2​O3​ MESFETs with a Power Figure of Merit over 0.9 GW/cm2

4.4 kV β-Ga2​O3​ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm2

Enhancing the Electron Mobility in Si-doped (010) $β$ -Ga $_{2}$ O $_{3}$ films with Low-Temperature Buffer Layers

Ultra-Wide Bandgap Ga $_{2}$ O $_{3}$ -on-SiC MOSFETs

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1} - x$ ) $_{2}$ O $_{3}$ Films

High-Mobility Tri-Gate $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Power Figure of Merit over 0.9 GW/cm $^{2}$

4.4 kV $β$ -Ga $_{2}$ O $_{3}$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^{2}$