activity
20192024
most citedHigh Permittivity Dielectric Field-Plated Vertical (001) -GaO Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of 1 GW/cm

189 citations · 1k across the 27 of their papers we have counts for

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Showing 2020Show all

9 papers · 1 filter

cond-mat.mtrl-sci2020★ 23 cited

Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped beta-Ga2O3 crystals

Rujun Sun, Yu Kee Ooi, Arkka Bhattacharyya +4

Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionall…

cond-mat.mtrl-sci2020

Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence

Rujun Sun, Yu Kee Ooi, Praneeth Ranga +3

In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, UV', blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor…

physics.app-ph2020★ 64 cited

Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels

Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski +5

We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is re…

physics.app-ph2020★ 28 cited

Delta-doped \b{eta}-Ga2O3 Films With Low FWHM Charge Profile Grown By Metalorganic Vapor-Phase Epitaxy

Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski +3

We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capa…

physics.app-ph2020★ 84 cited

Low Temperature Homoepitaxy Of (010) -GaO By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy +3

In this work, we report on the growth of high-mobility -GaO homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window fo…

physics.app-ph2020★ 8 cited

Analytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction Structures

Saurav Roy, Arkka Bhattacharyya, Sriram Krishnamoorthy

This work presents the design of beta-Ga2O3 schottky barrier diode using high-k dielectric superjunction to significantly enhance the breakdown voltage vs on-resistance trade-off b…