Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al$_2$O$_3$ on $Î²$-Ga$_2$O$_3$

Saurav Roy; Arkka Bhattacharyya; Carl Peterson; Sriram Krishnamoorthy

paper

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al $_{2}$ O $_{3}$ on $I^^{2}$ -Ga $_{2}$ O $_{3}$

arXiv:2408.11342

Abstract

In this article, we investigate the in-situ growth of Al $_{2}$ O $_{3}$ on $I^^{2}$ -Ga $_{2}$ O $_{3}$ using metal-organic chemical vapor deposition (MOCVD) at a high temperature of 800Â°C. The Al $_{2}$ O $_{3}$ is grown within the same reactor as the $I^^{2}$ -Ga $_{2}$ O $_{3}$ , employing trimethylaluminum (TMAl) and O $_{2}$ as precursors without breaking the vacuum. We characterize the shallow and deep-level traps through stressed capacitance-voltage (C-V) and photo-assisted C-V methods. The high-temperature deposited dielectric demonstrates an impressive breakdown field of approximately 10 MV/cm. Furthermore, we evaluate the reliability and lifetime of the dielectrics using time-dependent dielectric breakdown (TDDB) measurements. By modifying the dielectric deposition process to include a high-temperature (800Â°C) thin interfacial layer and a low-temperature (600Â°C) bulk layer, we report a 10-year lifetime under a stress field of 3.5 MV/cm along a breakdown field of 7.8 MV/cm.

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al2​O3​ on I^2-Ga2​O3​

Abstract

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al $_{2}$ O $_{3}$ on $I^^{2}$ -Ga $_{2}$ O $_{3}$