Saurav Roy

activity

20202022

β

-Ga

_{2}

_{3}

MESFETs with a Lateral Figure of Merit up to 355 MW/cm

^{2}

90 citations · 315 across the 5 of their papers we have counts for

collaborators

9 papers

physics.app-ph2022★ 68 cited

4.4 kV $β$ -Ga $_{2}$ O $_{3}$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^{2}$

Arkka Bhattacharyya, Shivam Sharma, Fikadu Alema +7

Field-plated (FP) depletion-mode MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN $_{x}$ dielectric…

physics.app-ph2021★ 90 cited

Multi-kV class $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Lateral Figure of Merit up to 355 MW/cm $^{2}$

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy +5

We demonstrate over 3 kV gate-pad-connected field plated (GPFP) $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs with high lateral figure of merit (LFOM) using metalorganic vapor phase epitaxy (MOV…

physics.app-ph2021

130 mA/mm $β$ -Ga $_{2}$ O $_{3}$ MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts

Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga +5

We report on the demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ metal-semiconductor field effect transistor…

physics.app-ph2020

Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels

Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski +5

We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is re…

physics.app-ph2020

Delta-doped \b{eta}-Ga2O3 Films With Low FWHM Charge Profile Grown By Metalorganic Vapor-Phase Epitaxy

Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski +3

We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capa…

physics.app-ph2020★ 84 cited

Low Temperature Homoepitaxy Of (010) $β$ -Ga $_{2}$ O $_{3}$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy +3

In this work, we report on the growth of high-mobility $β$ -Ga $_{2}$ O $_{3}$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window fo…

4.4 kV β-Ga2​O3​ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm2

Multi-kV class β-Ga2​O3​ MESFETs with a Lateral Figure of Merit up to 355 MW/cm2

130 mA/mm β-Ga2​O3​ MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts