Over 6 $\mu$m thick MOCVD-grown Low-Background Carrier Density (10${}^{15}$ cm${}^{-3}$) High-Mobility (010) $\beta$-Ga${}_2$O${}_3$ Drift Layers

Arkka Bhattacharyya, Carl Peterson, Kittamet Chanchaiworawit +4

This work reports high carrier mobilities and growth rates, simultaneously in low unintentionally-doped UID (10${}^{15}$ cm${}^{-3}$) MOCVD-grown thick $\beta$-Ga${}_2$O${}_3$ epitaxial drift…