Saurav Roy

activity

20202025

β

-Ga

_{2}

_{3}

MESFETs with a Lateral Figure of Merit up to 355 MW/cm

^{2}

90 citations · 461 across the 15 of their papers we have counts for

collaborators

Showing 2020Show all

6 papers · 1 filter

physics.app-ph2020

Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels

Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski +5

We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is re…

physics.app-ph2020

Delta-doped \b{eta}-Ga2O3 Films With Low FWHM Charge Profile Grown By Metalorganic Vapor-Phase Epitaxy

Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski +3

We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capa…

physics.app-ph2020★ 84 cited

Low Temperature Homoepitaxy Of (010) $β$ -Ga $_{2}$ O $_{3}$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy +3

In this work, we report on the growth of high-mobility $β$ -Ga $_{2}$ O $_{3}$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window fo…

physics.app-ph2020★ 8 cited

Analytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction Structures

Saurav Roy, Arkka Bhattacharyya, Sriram Krishnamoorthy

This work presents the design of beta-Ga2O3 schottky barrier diode using high-k dielectric superjunction to significantly enhance the breakdown voltage vs on-resistance trade-off b…

physics.app-ph2020

Design of a $β$ -Ga $_{2}$ O $_{3}$ Schottky Barrier Diode With p-type III-Nitride Guard Ring for Enhanced Breakdown

Saurav Roy, Arkka Bhattacharyya, Sriram Krishnamoorthy

This work presents the electrostatic analysis of a novel Ga $_{2}$ O $_{3}$ vertical Schottky diode with three different guard ring configurations to reduce the peak electric field at the…

physics.app-ph2020★ 65 cited

Schottky Barrier Height Engineering In $β$ -Ga $_{2}$ O $_{3}$ Using SiO $_{2}$ Interlayer Dielectric

Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh +4

This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $β$ -Ga $_{2}$ O $_{3}$ by insertion of an ultra-thin SiO $_{2}$ dielectric interlaye…

Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels

Delta-doped \b{eta}-Ga2O3 Films With Low FWHM Charge Profile Grown By Metalorganic Vapor-Phase Epitaxy

Low Temperature Homoepitaxy Of (010) β-Ga2​O3​ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Analytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction Structures

Design of a β-Ga2​O3​ Schottky Barrier Diode With p-type III-Nitride Guard Ring for Enhanced Breakdown

Schottky Barrier Height Engineering In β-Ga2​O3​ Using SiO2​ Interlayer Dielectric

Low Temperature Homoepitaxy Of (010) $β$ -Ga $_{2}$ O $_{3}$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Design of a $β$ -Ga $_{2}$ O $_{3}$ Schottky Barrier Diode With p-type III-Nitride Guard Ring for Enhanced Breakdown

Schottky Barrier Height Engineering In $β$ -Ga $_{2}$ O $_{3}$ Using SiO $_{2}$ Interlayer Dielectric