Multi-kV class $β$-Ga$_2$O$_3$ MESFETs with a Lateral Figure of Merit up to 355 MW/cm$^2$

Arkka Bhattacharyya; Praneeth Ranga; Saurav Roy; Carl Peterson; Fikadu Alema; George Seryogin; Andrei Osinsky; Sriram Krishnamoorthy

doi:10.1109/LED.2021.3100802

paper

Multi-kV class $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Lateral Figure of Merit up to 355 MW/cm $^{2}$

arXiv:2106.06661 · doi:10.1109/LED.2021.3100802

Abstract

We demonstrate over 3 kV gate-pad-connected field plated (GPFP) $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs with high lateral figure of merit (LFOM) using metalorganic vapor phase epitaxy (MOVPE) grown channel layers and regrown ohmic contact layers. Using an improved low-temperature MOVPE selective area epitaxy process, we show that a total contact resistance to the channel as low as 1.4 $Ω$ .mm can be achieved.The GPFP design adopted here using PECVD (plasma-enhanced chemical vapor deposition) deposited SiN $_{x}$ dielectric and SiN $_{x}$ /SiO $_{2}$ wrap-around passivation exhibits up to ~14% improved R $_{O N}$ , up to ~70% improved breakdown voltage (V $_{B R}$ = V $_{D S}$ - V $_{GS}$ ) resulting in up to $\sim$ 3 $\times$ higher LFOM compared to non-FP $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs. The V $_{B R}$ (~2.5 kV) and LFOM (355 MW/cm $^{2}$ ) measured simultaneously in our GPFP $β$ -Ga $_{2}$ O $_{3}$ lateral MESFET (with L $_{G D}$ = 10 $μ$ m) is the highest value achieved in any depletion-mode $β$ -Ga $_{2}$ O $_{3}$ lateral device.

6 pages, 5 figures

References in corpus (2)

Cited by in corpus (1)

4.4 kV $β$ -Ga $_{2}$ O $_{3}$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^{2}$

Multi-kV class β-Ga2​O3​ MESFETs with a Lateral Figure of Merit up to 355 MW/cm2

Abstract

References in corpus (2)

Cited by in corpus (1)

Multi-kV class $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Lateral Figure of Merit up to 355 MW/cm $^{2}$