90 citations · 428 across the 7 of their papers we have counts for
14 papers
4.4 kV -GaO Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm
Arkka Bhattacharyya, Shivam Sharma, Fikadu Alema +7
Field-plated (FP) depletion-mode MOVPE-grown -GaO lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN dielectric…
Multi-kV class -GaO MESFETs with a Lateral Figure of Merit up to 355 MW/cm
Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy +5
We demonstrate over 3 kV gate-pad-connected field plated (GPFP) -GaO lateral MESFETs with high lateral figure of merit (LFOM) using metalorganic vapor phase epitaxy (MOV…
N-type doping of LPCVD-grown \b{eta}-Ga2O3 thin films using solid-source germanium
Praneeth Ranga, Arkka Bhattacharyya, Luisa Whittaker-Brooks +2
We report on the growth and characterization of Ge-doped \b{eta}-Ga2O3 thin films using a solid germanium source. \b{eta}-Ga2O3 thin films were grown using a low-pressure chemical…
130 mA/mm -GaO MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts
Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga +5
We report on the demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown -GaO metal-semiconductor field effect transistor…
The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3
Prashanth Gopalan, Sean Knight, Ashish Chanana +11
The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequenc…
Impurity Band Conduction in Si-doped \b{eta}-Ga2O3 Films
Anil Kumar Rajapitamahuni, Laxman Raju Thoutam, Praneeth Ranga +2
By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase…