P. Ranga

activity

20192024

most citedHigh Permittivity Dielectric Field-Plated Vertical (001)

β

-Ga

_{2}

_{3}

Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of

>

1 GW/cm

^{2}

189 citations · 933 across the 20 of their papers we have counts for

collaborators

20 papers

cond-mat.mtrl-sci2024

Effective uniaxial dielectric function tensor and optical phonons in ( $2 ˉ 01$ )-plane oriented $β$ -Ga $_{2}$ O $_{3}$ films with equally-distributed six-fold rotation domains

Alyssa Mock, Steffen Richter, Alexis Papamichail +11

Monoclinic $β$ -Ga $_{2}$ O $_{3}$ films grown on $c$ -plane sapphire have been shown to exhibit six $(2 ˉ 01)$ -plane oriented domains, which are equally-spaced-by-rotation around the su…

cond-mat.mtrl-sci2024

Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in \b{eta} -Ga2O3

Nathan D. Rock, Haobo Yang, Brian Eisner +9

Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equi…

cond-mat.mtrl-sci2022

Enhancing the Electron Mobility in Si-doped (010) $β$ -Ga $_{2}$ O $_{3}$ films with Low-Temperature Buffer Layers

Arkka Bhattacharyya, Carl Peterson, Takeki Itoh +6

We demonstrate a new substrate cleaning and buffer growth scheme in $β$ -Ga $_{2}$ O $_{3}$ epitaxial thin films using metalorganic vapor phase epitaxy (MOVPE). For the channel structure,…

physics.app-ph2022★ 71 cited

High-Mobility Tri-Gate $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Power Figure of Merit over 0.9 GW/cm $^{2}$

Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga +2

In this letter, fin-shape tri-gate $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs are demonstrated with a high power figure of merit of 0.95 GW/cm $^{2}$ - a record high for any $β$ -Ga $_{2}$ O$…

physics.app-ph2022★ 68 cited

4.4 kV $β$ -Ga $_{2}$ O $_{3}$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^{2}$

Arkka Bhattacharyya, Shivam Sharma, Fikadu Alema +7

Field-plated (FP) depletion-mode MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN $_{x}$ dielectric…

physics.app-ph2021★ 90 cited

Multi-kV class $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Lateral Figure of Merit up to 355 MW/cm $^{2}$

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy +5

We demonstrate over 3 kV gate-pad-connected field plated (GPFP) $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs with high lateral figure of merit (LFOM) using metalorganic vapor phase epitaxy (MOV…

cond-mat.mtrl-sci2021★ 189 cited

High Permittivity Dielectric Field-Plated Vertical (001) $β$ -Ga $_{2}$ O $_{3}$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm $^{2}$

Saurav Roy, Arkka Bhattacharyya, Praneeth Ranga +3

This paper presents vertical (001) oriented $β$ -Ga $_{2}$ O $_{3}$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift la…

cond-mat.mtrl-sci2021★ 38 cited

In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition

Saurav Roy, Adrian E. Chmielewski, Arkka Bhattacharyya +5

High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$…

cond-mat.mtrl-sci2021★ 33 cited

N-type doping of LPCVD-grown \b{eta}-Ga2O3 thin films using solid-source germanium

Praneeth Ranga, Arkka Bhattacharyya, Luisa Whittaker-Brooks +2

We report on the growth and characterization of Ge-doped \b{eta}-Ga2O3 thin films using a solid germanium source. \b{eta}-Ga2O3 thin films were grown using a low-pressure chemical…

physics.app-ph2021

130 mA/mm $β$ -Ga $_{2}$ O $_{3}$ MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts

Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga +5

We report on the demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ metal-semiconductor field effect transistor…

cond-mat.mtrl-sci2020

The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3

Prashanth Gopalan, Sean Knight, Ashish Chanana +11

The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequenc…

cond-mat.mtrl-sci2020★ 21 cited

Impurity Band Conduction in Si-doped \b{eta}-Ga2O3 Films

Anil Kumar Rajapitamahuni, Laxman Raju Thoutam, Praneeth Ranga +2

By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase…

cond-mat.mtrl-sci2020

Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence

Rujun Sun, Yu Kee Ooi, Praneeth Ranga +3

In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, UV', blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor…

physics.app-ph2020★ 64 cited

Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels

Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski +5

We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is re…

physics.app-ph2020★ 28 cited

Delta-doped \b{eta}-Ga2O3 Films With Low FWHM Charge Profile Grown By Metalorganic Vapor-Phase Epitaxy

Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski +3

We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capa…

physics.app-ph2020★ 84 cited

Low Temperature Homoepitaxy Of (010) $β$ -Ga $_{2}$ O $_{3}$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy +3

In this work, we report on the growth of high-mobility $β$ -Ga $_{2}$ O $_{3}$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window fo…

cond-mat.mtrl-sci2020★ 71 cited

Highly tunable polarization-engineered two-dimensional electron gas in $ε$ -AlGaO3 / $ε$ -Ga2O3 heterostructures

Praneeth Ranga, Sung Beom Cho, Rohan Mishra +1

We report on the modeling of polarization-induced two-dimensional electron gas (2DEG) formation at $ε$ -AlGaO3 / $ε$ -Ga2O3 heterointerface and the effect of spontaneous polarization…

physics.app-ph2020★ 65 cited

Schottky Barrier Height Engineering In $β$ -Ga $_{2}$ O $_{3}$ Using SiO $_{2}$ Interlayer Dielectric

Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh +4

This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $β$ -Ga $_{2}$ O $_{3}$ by insertion of an ultra-thin SiO $_{2}$ dielectric interlaye…

cond-mat.mtrl-sci2019★ 50 cited

Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

Praneeth Ranga, Arkka Bhattacharyya, Ashwin Rishinaramangalam +4

We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are character…

cond-mat.mtrl-sci2019★ 61 cited

MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures

Praneeth Ranga, Ashwin Rishinaramangalam, Joel Varley +3

We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure…

Effective uniaxial dielectric function tensor and optical phonons in (2ˉ01)-plane oriented β-Ga2​O3​ films with equally-distributed six-fold rotation domains

Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in \b{eta} -Ga2O3

Enhancing the Electron Mobility in Si-doped (010) β-Ga2​O3​ films with Low-Temperature Buffer Layers

High-Mobility Tri-Gate β-Ga2​O3​ MESFETs with a Power Figure of Merit over 0.9 GW/cm2

4.4 kV β-Ga2​O3​ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm2

Multi-kV class β-Ga2​O3​ MESFETs with a Lateral Figure of Merit up to 355 MW/cm2

High Permittivity Dielectric Field-Plated Vertical (001) β-Ga2​O3​ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of > 1 GW/cm2