Highly tunable polarization-engineered two-dimensional electron gas in $\epsilon$-AlGaO3 / $\epsilon$-Ga2O3 heterostructures

Abstract

We report on the modeling of polarization-induced two-dimensional electron gas (2DEG) formation at $\epsilon$-AlGaO3 / $\epsilon$-Ga2O3 heterointerface and the effect of spontaneous polarization (Psp) reversal on 2DEG density in $\epsilon$-Ga2O3 /$\epsilon$-AlGaO3 / $\epsilon$-Ga2O3 double heterostructures. Density-functional theory (DFT) is utilized to calculate the material properties of $\epsilon$-Ga2O3 and $\epsilon$-AlGaO3 alloys. Using Schrodinger-Poisson solver along with DFT calculated parameters, the 2DEG density is calculated as a function of barrier type and thickness. By optimizing the layer thicknesses of $\epsilon$-Ga2O3/$\epsilon$-AlGaO3/$\epsilon$-Ga2O3 heterostructures, charge contrast ratios exceeding 1600 are obtained. This computational study indicates the high potential for $\epsilon$-Ga2O3-based heterostructure devices for non-volatile memories and neuromorphic applications.

References in corpus (2)

• Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor
• First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures