P. Ranga

activity

20192024

most citedHigh Permittivity Dielectric Field-Plated Vertical (001)

β

-Ga

_{2}

_{3}

Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of

>

1 GW/cm

^{2}

189 citations · 933 across the 20 of their papers we have counts for

collaborators

Showing physics.app-phShow all

8 papers · 1 filter

physics.app-ph2022★ 71 cited

High-Mobility Tri-Gate $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Power Figure of Merit over 0.9 GW/cm $^{2}$

Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga +2

In this letter, fin-shape tri-gate $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs are demonstrated with a high power figure of merit of 0.95 GW/cm $^{2}$ - a record high for any $β$ -Ga $_{2}$ O$…

physics.app-ph2022★ 68 cited

4.4 kV $β$ -Ga $_{2}$ O $_{3}$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^{2}$

Arkka Bhattacharyya, Shivam Sharma, Fikadu Alema +7

Field-plated (FP) depletion-mode MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN $_{x}$ dielectric…

physics.app-ph2021★ 90 cited

Multi-kV class $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Lateral Figure of Merit up to 355 MW/cm $^{2}$

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy +5

We demonstrate over 3 kV gate-pad-connected field plated (GPFP) $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs with high lateral figure of merit (LFOM) using metalorganic vapor phase epitaxy (MOV…

physics.app-ph2021

130 mA/mm $β$ -Ga $_{2}$ O $_{3}$ MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts

Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga +5

We report on the demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ metal-semiconductor field effect transistor…

physics.app-ph2020★ 64 cited

Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels

Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski +5

We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is re…

physics.app-ph2020★ 28 cited

Delta-doped \b{eta}-Ga2O3 Films With Low FWHM Charge Profile Grown By Metalorganic Vapor-Phase Epitaxy

Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski +3

We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capa…

physics.app-ph2020★ 84 cited

Low Temperature Homoepitaxy Of (010) $β$ -Ga $_{2}$ O $_{3}$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy +3

In this work, we report on the growth of high-mobility $β$ -Ga $_{2}$ O $_{3}$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window fo…

physics.app-ph2020★ 65 cited

Schottky Barrier Height Engineering In $β$ -Ga $_{2}$ O $_{3}$ Using SiO $_{2}$ Interlayer Dielectric

Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh +4

This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $β$ -Ga $_{2}$ O $_{3}$ by insertion of an ultra-thin SiO $_{2}$ dielectric interlaye…

High-Mobility Tri-Gate β-Ga2​O3​ MESFETs with a Power Figure of Merit over 0.9 GW/cm2

4.4 kV β-Ga2​O3​ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm2

Multi-kV class β-Ga2​O3​ MESFETs with a Lateral Figure of Merit up to 355 MW/cm2

130 mA/mm β-Ga2​O3​ MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts